Innoscience Technology, the company founded to create a global energy ecosystem based on high performance, low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions, announced the official launch of its international operations in the USA and Europe. Headquartered in Suzhou, China, Innoscience is now poised to support
Tag: GaN-on-Si
ALLOS’ GaN-on-Si epiwafers are used for in-vivo brain/machine interface by Toyohashi University
ALLOS’ customers confirm excellent dynamic Ron performance of carbon-doping free GaN-on-Si
Known for causing bad dynamic on-resistance, carbon-doping is uniquely avoided by ALLOS (www.allos-semiconductors.com) and data available from customers now confirmed not only outstanding wafer-level data but also excellent dynamic Ron and high temperature performance. In an invited talk at the E-MRS scientific conference