As a semiconductor substrate, silicon carbide (SiC) is a high-demand, very efficient crystal material that can handle high voltages and high thermal loads. With decades of experience producing high-quality crystal materials, GT Advanced Technologies has introduced its CrystX™ silicon carbide for rapidly expanding power electronics applications such as electric vehicles.
The form factor for the product is 150mm (6″) diameter. Resistivity is 20 mΩ-cm ±5. Upon request, this can be tuned to a 2 mΩ-cm range.
GTAT supplies its CrystX™ silicon carbide to partners downstream who specialize in wafering and polishing. Still further downstream, devices are placed on the wafers. The devices go into power inverters, power converters, and other electronic modules.
Because GTAT focuses solely on silicon carbide, it can help grow the number of companies offering SiC wafers. As more companies evolve to provide SiC wafers based on GTAT’s material, global supplies of this crucial substrate will increase and costs will fall.
For details, please click https://gtat.com/products/silicon-carbide/
