UnitedSiC’s new 750V Gen 4 SiC FETs range from 6mΩ to 60mΩ, deliver industry-best figures of merit, coming in 13 different RDS(on) and package options. Power designers can now pick their target power levels, then optimize their design for efficiency, cost, and thermal performance.
Key Features:
– VDS: 750V
– RDS(on): 6mΩ to 60mΩ
– Best-in-class “Figures of Merit” enable new levels of high-performance power design
– RDS(on) x Area
– Qrr and Eon/Eoff losses at a given RDS(on)
– Coss(er)/Eoss and Coss(tr) at a given RDS(on)
– 5µs short-circuit capability @ 6mΩ
– 0 to 12V gate drive, with VTH = 5V
– Operates from all typical SiC MOSFET, Si IGBT, and Si MOSFET gate drives
– Industry-standard TO-247 package
– 6, 9, 11, 18, 23, 33, 44, and 60mΩ available in TO-247-4L
– 18, 23, 33, 44, and 60mΩ available in TO-247-3L
Finding the ideal FET is easy with its FET-Jet Calculator™. In just 3 easy steps you can narrow in on the most promising solutions to make design decisions quickly and confidently. Try it to get started on your next design: on https://info.unitedsic.com/fet-jet?hsLang=en.
