Gallium Semiconductor, an innovative supplier of RF Gallium Nitride (GaN) semiconductor solutions, unveiled its broad portfolio of RF Power Transistor products at the European Microwave Week 2022 Conference.
The company showcased a wide variety of GaN solutions for 5G infrastructure, aerospace and defense, public safety, and industrial, scientific, and medical (ISM) applications.
Key product highlights include:
- Known good die of GaN devices optimally designed for low thermal resistance and ranging from 10 to 400 Watts of saturated output power
- Unmatched GaN transistors in low cost plastic DFN packages with high reliability and excellent heat dissipation
- Easy-to-use broadband and pre-matched GaN transistors in air cavity packages
- Innovative dual path transistor solutions for 5G networks with excellent digital pre-distortion capability
These products deliver optimal performance for output power, gain, efficiency, and bandwidth. “Customers continue to demand RF power amplifiers that deliver high performance with high efficiency,” said Michael Guyonnet, Vice President of Networks for Gallium Semi. “Our innovative GaN solutions provide breakthrough performance that customers require for their critical communication, radar and ISM applications.”
The new RF power transistors and evaluation boards are currently available for sampling to qualified customers. Gallium Semi’s full product catalog in electronic format is available for download at www.galliumsemi.com/downloads.
