Navitas Semiconductor announced the world’s first production of 650 V bi-directional GaNFast ICs. This creates a paradigm shift in power by enabling the transition from two-stage to single-stage topologies.
Bi-Directional GaNFast power ICs function as two ‘back-to-back’ GaN power switches. They are leading-edge, monolithic, single-chip designs with a merged drain structure, two gate controls, and a patented, integrated, autonomous substrate clamp.
This latest breakthrough creates a paradigm shift in power with single-stage bi-directional switch (BDS) converters, enabling the transition from two-stage to single-stage topologies, to provide highest efficiency, power density, and performance, while reducing system cost and complexity.
Targeted applications range widely across EV charging (On-Board Chargers (OBC) and roadside), solar inverters, energy storage, and motor drives. More details are available here, including a video.
