Efficient Power Conversion (EPC) announced the mass production of the EPC2370, an ultra-low on-resistance 18 V eGaN® FET engineered to enhance the efficiency and power density of next-generation AI server power supplies. The EPC2370 has a 22 V transient voltage rating that
Author: 이철민 기자
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차세대 AI 데이터 센터용 800V DC 컨버터
EPC Space unveils radiation-hard eGaN FETs for next-generation space computing
EPC Space, a specialist manufacturer of radiation-hardened, high-performance, and enhanced-reliability GaN discrete transistors, integrated circuits, and modular devices, unveiled three new eGaN® power transistors in plastic surface-mount packages, designed to deliver high-performance power conversion for next-generation space computing systems. The EPC7050PCSH, EPC7066PCSH
업계 최저 RDS(ON) 실리콘 카바이드(SiC) MOSFET
ADC Selection for Partial Discharge Pulse Analysis in High-Voltage Power Systems
Partial discharge in high-voltage distribution equipmentcan be used as an early warning indicator of insulation degradation and eventual failure, and without detection, can evolve into complete dielectric breakdown, arc faults, and potentially explosive equipment failure. If partial discharge goes unmonitored, the consequences can
GaN microLEDs for high-speed optical interconnects are further developed
입방형 GaN 마이크로LED 기술, 광통신 애플리케이션에서 기가헤르츠 스위칭 속도를 구현할까?
열화 현상을 해결한 6.5kV SiC MOSFET
Ambiq’s ultra-low power SoCs feature scalable edge AI and platform enhancements for intelligent devices
Ambiq Micro unveiled Apollo330 Plus and Apollo510 Lite SoC series designed to help manufacturers bring high-performance, power-efficient edge AI devices to market faster, are now available. The Apollo330 Plus and Apollo510 Lite series span six variants—Apollo330 Plus, Apollo330B Plus, Apollo330M Plus, Apollo510 Lite, Apollo510B Lite, and
