Mitsubishi Electric begins shipping samples of ten new models of its industrial-use NX-type 1.2kV insulated gate bipolar transistor (IGBT) module on a sequential basis starting June 15. Designed for use in inverters that control machine tools, industrial robots and large-capacity motor drive systems,1 the modules are equipped with the latest eighth-generation IGBTs.
Compared to existing IGBT modules,2 the modules reduce power loss by up to approximately 19%, thereby decreasing power consumption in industrial equipment.
Mitsubishi Electric will exhibit the NX-type 1.2kV IGBT module for industrial use at Power Conversion Intelligent Motion (PCIM) Expo & Conference 2026 in Nuremberg, Germany from June 9 to 11, as well as upcoming exhibitions in Japan, China and other countries.
By optimizing the IGBT and diode layout, Mitsubishi Electric was able to add a new 1000A-rated model with a rating 1.25 times3 that of current models, but within the same package size, realizing higher inverter output. The continued use of the Industrial NX-type package ensures the easy replacement of existing modules and helps shorten the development period for new inverters.
Product Features
1) 8th-generation IGBT cuts power loss by up to approx. 19% compared to conventional products
– The proprietary split dummy active (SDA) structure4 suppresses dv/dt,5 which causes noise and complicates high-speed switching, resulting in faster switching than with 7th-generation IGBTs and less power loss during turn-on.
– The proprietary carrier plasma layer (CPL) structure6 suppresses overvoltage during turn-off, which can lead to IGBT failure, and allows for thinner IGBT chips, which helps cut power loss during turn on, turn-off and conduction.
– These advancements reduce power loss by up to approximately 19% compared to conventional products with 7th-generation IGBTs, contributing to lower power consumption in inverters.
2) New maximum 1000A rated lineup contributes to higher inverter output – By optimizing the arrangement of the IGBTs and diodes on the chip, the new 1000A-rated model: 1.25 times the output of existing products which maintaining the same package size.
3) Compatibility with conventional packages shortens inverter development periods
– Maintaining the same external dimensions and terminal positions as the Industrial NX package allows the new modules to easily install in existing products, shortening inverter-development periods.
There is growing demand for power semiconductors that enable efficient energy conversion for a decarbonized world. Industrial power semiconductor modules are essential for inverters that efficiently operate and control motors in factory machine tools and industrial robots.
Consequently, power consumption in industrial equipment must be reduced further, driving demand for modules that deliver higher efficiency and greater output.
Since first equipping modules with IGBTs in 1990, Mitsubishi Electric has have earned a strong reputation for the excellent performance and high reliability power of its semiconductor products, which are used in a wide range of applications, including consumer electronics, automotive, industrial, electric power, and railway sectors.
The company has focused on reducing power loss and improving the reliability of IGBTs, which significantly impact overall product performance. Most recently, Mitsubishi Electric developed 8th-generation IGBTs featuring proprietary SDA structures and controlling CPL structures.
Mitsubishi Electric is steadily contributing to the Green Transformation (GX) by delivering timely products that meet market needs for energy-efficient power electronics across diverse fields.
