Navitas Semiconductor has filed a patent infringement lawsuit against Renesas Electronics in the United States District Court for the Eastern District of Texas.
“Navitas is an early GaN innovator and leader that is successfully capitalizing on the substantial and growing market opportunity for high-powered solutions,” said Navitas President and CEO Chris Allexandre.
“We pioneered bringing GaN technology to scale. We’ve heavily invested in R&D in both GaN and high-voltage SiC and have protected our proprietary innovations through robust intellectual property. We respect valid intellectual property rights and we expect our competitors to do likewise.”
The lawsuit asserts that Renesas’ major GaN product lines, including Renesas’ SuperGaN power semiconductors, infringe Navitas’ industry-leading gallium nitride (GaN) patent portfolio, including U.S. Patent Nos. 9,929,079; 11,545,838; 11,770,010; and 11,862,996.
Navitas’ momentum in delivering high-power products for AI infrastructures, composed of AI data centers and the energy grid infrastructure that powers them, recently led to Navitas’ strong second quarter 2026 results with revenue growth expected to accelerate in the third quarter as the company pivots towards its Navitas 2.0 vision.
Navitas built its business through independent research, engineering excellence and investment — developing industry-leading technologies backed by a robust global intellectual property portfolio of more than 300 patents issued or pending.
Since its founding in 2014, Navitas has been a pioneer in wide bandgap technologies driving innovation across AI data centers, energy and grid infrastructure, performance computing, and industrial electrification.
“By bringing this action to defend our intellectual property, we are standing up for our employees, customers and partners, as well as the principles of fair competition and rewarding innovation that are critical to the power semiconductor market as a whole,” Mr. Allexandre said.
