Hot is the industry’s highest-power GaN MMIC power amplifier (PA) from Qorvo. Delivering up to 100 watts of saturated power in a small, 7 mm x 7 mm QFN package, the PA is internally matched and requires no additional external RF components, enabling designers and system integrators to maximize design by reducing size and weight while offering better performance.
The integrated Surface Mount Technology (SMT) package design enables customers to manufacture at a lower cost compared to die or bolt-down flange package alternatives.
The Qorvo QPA2309, built on the company’s patented QGaN25HV wafer process, operates between 5-6 GHz (C-band) and delivers an industry-best power added efficiency (PAE) of 52%. This GaN PA provides defense radar customers with two times higher saturated power, higher large signal gain and improved PAE in the same package size as the previous generation product. Qorvo also offers customers the option of a 50-watt version (QPA2310) in the same package configuration.
The QPA2309 and QPA2310 with the following specifications, are available for sampling to qualified customers.
| Specifications | QPA2309 | QPA2310 |
| Frequency Range | 5.0 – 6.0 GHz | 5.0 – 6.0 GHz |
| PSAT | 100 Watts | 50 Watts |
| PAE | 52% | 53% |
| Power Gain | 22 dB | 23 dB |
| Bias | VD = 50V, IDQ = 600 mA | VD = 50V, IDQ = 300 mA |
| Package Dimensions | 7.0 x 7.0 x 0.82 mm | 7.0 x 7.0 x 0.82 mm |
Hordon Kim
International Editor, hordon@powerelectronics.co.kr
