Navitas Semiconductor showcases GaN power ICs, the leading, next-generation power technology, at the virtual Applied Power Electronics Conference (APEC 2021) June 14th – 17th, 2021.
Gallium Nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon (Si) and enables up to 3x more power or 3x faster charging in half the size & weight, with up to 40% energy savings. GaNFast power ICs integrate GaN power and drive plus protection and control to deliver the simplest, smallest, fastest and now even higher-power performance.
From fast chargers to electric vehicles and from data center equipment to solar energy, GaN power ICs are replacing legacy silicon semiconductors in designs from 20W to 20kW+ as designers look to improve system performance while driving down power consumption and reducing greenhouse gas emissions. With over 20 million GaN power ICs shipped and zero confirmed field-use failures, Navitas GaNFast technology is a proven platform for higher power platforms.
GaN is projected to address markets valued at over $13B by 2026, and GaN has the potential to “Electrify Our World” and reduce CO2 emissions by up to 2.6 Gtons annually by 2050 to help everyone achieve the climate goals of the Paris Accord.
At APEC, Navitas will highlight its partnerships with some of the world’s leading companies including Dell, Lenovo, OPPO, Xiaomi, LG and many more, all of whom have developed high-efficiency, high-power-density fast chargers for smartphones or laptops using Navitas technology. The ‘virtual’ booth contains links to deeper technical information on all of these applications, including the very latest 100W Baseus phone/laptop charger that can charge smartphones from zero to 50% in just five minutes.
Among the devices showcased at APEC 2021 will be the NV6128, the company’s most recent high-power GaNFast IC, which offers 650 V/800 V nominal/peak operation in a compact 6 mm x 8 mm PQFN package.
“Engineers trying to design next-generation, energy-saving and high-density power systems are finding that legacy silicon and early ‘discrete’ GaN can’t help them,” commented Stephen Oliver, vice president of corporate marketing and investor relations at Navitas.
“GaNFast power ICs, with fully-integrated power, drive, control & protection unlock the full promise of wide band-gap technology. Taking part in APEC allows us to show visitors state-of-the-art GaN power IC design and applications, and give them access to experts with experience in how to best deploy these technologies across a variety of applications.”
