Renesas Electronics launched the industry’s first 650V GaN device with dual-side cooling for high-density power conversion in 800V high-voltage DC (HVDC) AI data center architectures.
The new TP65H020G4PLSGBD D-Mode device delivers 20 milliohms (mΩ) on-resistance — one of the lowest in its class — in an ultra-compact, dual-side-cooled (DSC) PQFN package that handles more power in less space. Renesas is currently sampling the device to major AI Datacenter OEMs and ODMs.
Built on its Gen IV Plus GaN architecture, the device is purpose-built for the megawatt-scale demands driving next-generation AI data centers supporting up to 700V operation. It targets the 800V DC/DC intermediate bus converter (IBC) stage that steps down to 48V, 12V or 6V, along with the battery backup (BBU) and capacitor bank (CBU) stages of the sidecar power rack.
As rack power climbs from roughly 120 kW toward megawatt scale, space and heat have become critical factors in sustaining the power level. Unlike conventional top-side-cooled packages, the new device dissipates heat from both top and bottom, lowering top-side thermal impedance by 10%. Its 8 x 8mm PQFN footprint is also 57% smaller than the existing 10 x 15mm TOLT package.
The device incorporates the full strength of Renesas Gen IV Plus 650V GaN technology: low gate charge and output capacitance, a built-in freewheeling diode with minimal reverse recovery and a high threshold voltage that runs without a negative gate bias.
Engineers can drive it with a standard silicon gate driver, switch into the MHz frequency range to minimize passive components and cut overall BOM cost without requiring a specialized E-mode driver.
