Magnachip Semiconductor released two new 6th-generation 600V Super Junction (SJ) MOSFETs designed to meet the growing performance and efficiency requirements of AI server power applications.
The new products feature low RDS(ON) values of 36mΩ and 37mΩ, helping reduce conduction losses and improve overall power conversion efficiency.
In addition, both devices integrate a Zener diode between the gate and source terminals to provide enhanced protection against electrostatic discharge (ESD), thereby improving device reliability. The chip size has also been significantly reduced compared with the previous generation, contributing to improved integration and design flexibility.
The MMTB60R037G6FZVRH incorporates a Fast Recovery Body Diode, which helps reduce reverse recovery losses and improve switching performance in high-frequency power conversion systems. These characteristics make it well suited for AI server power supplies, where efficiency, thermal management, and power density are critical design considerations.
Both devices are offered in a TOLL package and are designed for high-power, high-current applications. They also feature a Kelvin Source configuration, which reduces parasitic inductance and improves switching stability.
The growing demand for energy-efficient power conversion solutions across AI servers, EV charging systems and industrial power supplies is driving the adoption of advanced power semiconductors. Higher efficiency, improved thermal performance and increased power density have become critical requirements for next-generation power systems.
