NoMIS Power demonstrated the 6.5KV SiC MOSFETs successfully last month. While the company’s MOSFET portfolio scales from 3.3KV (in production) through the demonstrated 6.5KV device, the highest voltage classes – 10KV and above – increasingly favor SiC insulated-gate bipolar transistor (IGBT) architectures for their conduction characteristics at very high blocking voltages.
NoMIS Power is extending its rugged planar SiC device and packaging expertise into 6.5KV, 10KV, and 20KV SiC IGBTs suited to the size, weight, power (SWaP), and reliability demands of aerospace, defense, data-center, and grid-scale platforms.
Why high-voltage SiC matters for critical, dual-use applications
Across the target voltage range, SiC delivers advantages that are decisive for demanding, dual-use power systems:
- Survivability and ruggedness: robust operation in high-temperature, high-altitude, and high-radiation environments compared with legacy silicon devices of similar rating.
- Size, weight, and power (SWaP): higher power density enables smaller, lighter power conversion for platforms where space and mass are constrained.
- Efficiency and thermal headroom: low, stable losses reduce cooling burden and improve mission endurance.
- Trusted, domestic design: U.S.-designed SiC devices and packaging support supply-chain assurance for the aerospace and defense industrial base.
A U.S.-based, domestic source of high-voltage SiC
For programs dependent on a single supplier of high-voltage SiC, NoMIS Power offers a domestic alternative. The company’s devices are U.S.-designed, ITAR- and DFARS-aware, and available through various foundry options, and its SiC is already specified in programs funded by the U.S. Department of Energy and Department of War.
The company supports device qualification and design-in – including form-fit-function-compatible devices and support for existing high-voltage SiC platforms – to reduce single-source risk and strengthen continuity of supply for mission-critical programs. NoMIS Power designs SiC devices, packaging, and power modules at its facility within the Albany Nanotech Complex in Albany, New York.
Availability
The 3.3KV family is available now in bare die and discrete package, with samples and customization options for customers. The 6.5 kV large-die SiC MOSFET is sampling now to U.S.-based customers for evaluation, with standard production parts scheduled for Q4 2026.
NoMIS Power is engaging system developers on design-in, target specifications, custom current ratings, and packaging. Teams evaluating high-voltage SiC for HVDC, solid-state transformers, pulsed power, traction, high-power charging, or aerospace and defense platforms can contact NoMIS Power to align to the 6.5KV, 10KV, and 20KV roadmap.
