KnowMade launched two new patent monitoring services dedicated to SiC technology: the SiC Substrates & Epitaxial Wafers Patent Monitor and the SiC Power Devices & Modules Patent Monitor. These new solutions are designed to help R&D, IP, strategy and business-development teams continuously track the fast-evolving technology and
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Google and Energy Dome advance multi-continent energy storage buildout with first bilateral project in Ireland
Eggtronic unveils high-efficiency 500W microinverter reference platform with Renesas
Eggtronic, a specialist semiconductor company innovating in high-performance IC controllers for power electronics, unveiled a jointly developed 500W solar microinverter reference platform with Renesas Electronics Corporation. The design combines Eggtronic’s EPIC™ mixed-signal controller technology with Renesas’ bidirectional Gallium Nitride (GaN) switch to demonstrate a high-efficiency
Nissan-led research project changes the game on EV charging, lowering energy bills and improving access to renewable energy for owners
Engineers at Nissan Technical Centre Europe (Cranfield, UK) will lead an innovative £10 million Government-backed research project that will fundamentally change how electric vehicles are charged, powered and experienced – accelerating the shift to smarter, more sustainable mobility and putting innovative, research-led
Future Electronics showcases Microchip Edge AI solutions for production-ready embedded intelligence
Future Electronics is highlighting Microchip’s production-ready Edge AI solutions, designed to help developers accelerate the deployment of intelligent embedded systems with faster decision-making, lower latency, and enhanced data privacy. As artificial intelligence continues to transform embedded applications, Edge AI enables machine learning models
IVWorks “reGaN” technology enables world’s first 742 GHz GaN HEMT
A GaN high-electron-mobility transistor (HEMT) incorporating IVWorks’ proprietary reGaN selective regrowth technology has become the world’s first GaN transistor to achieve a maximum frequency (fmax) exceeding 700 GHz. This achievement was demonstrated through a 45nm GaN HEMT device developed by Professor Dae-hyun
Barco extension kits use Valens semiconductor chipsets
Valens Semiconductor’s HDBaseT chipsets will form the connectivity infrastructure inside Barco’s ClickShare USB-C Extension over CAT kit. The product adds a wired extension connectivity option to Barco’s ClickShare Hub, delivering reliable and low-latency USB-C extension for complex videoconferencing installations. The ClickShare USB-C Extension over
REC Silicon announces extension of $50 million facility loan
Knowles Specialty Components meet growing demand for pulse power in complex applications
Across aerospace and defense applications, industrial systems, and medical devices, modern technologies increasingly depend on precise, reliable, and repeatable power delivered in tightly controlled timeframes. These needs place a greater demand on the components, particularly capacitors, that store and release energy in
Navitas’ isolated through-hole package for SiC MOSFETs enable direct-cooled thermal management
Navitas Semiconductor launched its new UHV‑TO‑247‑4‑ISO package, setting a new benchmark for high‑performance discrete power devices. Featuring over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation, the package is purpose‑built for 1200 V to 3300 V GeneSiC SiC MOSFETs, delivering module‑like performance