핵심 반도체 전문업체인 넥스페리아 (지사장: 김영택)는 오늘 기존의 기술 및 경쟁 회사 제품 대비 훨씬 향상된 성능을 제공하는 자사의 2 세대 650V 전원 질화 갈륨 (GaN) FET 소자 제품군의 대량 공급을 개시한다고 발표했다. RDS(on) 성능을 35mΩ(일반)까지 낮춘 이 전력 질화 갈륨 FET는
Tag: FET
Semiconductor Energy Laboratory and Silvaco jointly develop SPICE model of oxide semiconductor FETs for AI applications
Semiconductor Energy Laboratory (SEL) and Silvaco have jointly developed a SPICE model of oxide semiconductor FETs (field effect transistor) for use in a variety of applications, including the AI (artificial intelligence) field. The crystalline oxide semiconductor CAAC-IGZOⓇ FET (c-axis aligned crystalline indium-gallium-zinc oxide
EPC receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower stage IC
UnitedSiC’s power design tool helps engineers identify optimal SiC FET design solutions
UnitedSiC, a specialist of silicon carbide (SiC) power semiconductors, has launched the FET-Jet Calculator, a simple, registration-free online tool that facilitates selection and performance comparison in different power applications and topologies. This new tool allows engineers to make design decisions quickly and
Transphorm’s GaN products meet crypto mining power supply units performance requirements
트랜스폼의 전기자동차용 SuperGaN FET, 패키징 상태에서 세계 최저 온-저항
EPC’s 40 V eGaN FET features high power density solutions for USB-C battery chargers and ultra-thin point-of-load converters
Transphorm’s SuperGaN Gen V FET delivers world’s lowest package on-resistance, targetting electic vehicle applications
Transphorm and Strategic Partner Marelli Positioned to Penetrate Rapidly Growing EV Power Conversion Market Transphorm, a pioneer and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today the sampling of its first Gen V device under its proprietary