EPC (Efficient Power Conversion) unveiled an 80 V, 12.5 A power stage integrated circuit designed for 48 V DC-DC conversion used in high-density computing applications and in motor drives for e-mobility. The EPC2152 is a single-chip driver plus eGaN® FET half-bridge power
Tag: GaN
[White paper] Practical considerations when comparing SiC and GaN in power applications
Practical considerations when comparing SiC and GaN in power applications By Anup Bhalla, PhD. VP Engineering UnitedSiC Abstract Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductor technologies are promising great things for the future. SiC devices in a cascode configuration enable existing systems
VisIC unveils 100kW motor inverter reference design for EV, PV, industrial and other applications
KONKA enters production of GaN and AsP LEDs by use of AIXTRON MOCVD systems
파워 인테그레이션스, 강력한 750V GaN 트랜지스터 통합해 InnoSwitch3 IC 범위 확대
STMicroelectronics acquires majority stake in GaN innovator Exagan
STMicroelectronics has signed an agreement to ac stake in French Gallium Nitride (GaN) innovator Exagan. Exagan’s expertise in epitaxy, product development and application know-how will broaden and accelerate ST’s power GaN roadmap and business for automotive, industrial and consumer applications. Exagan will
Power Integrations Expands Range of InnoSwitch3 ICs Incorporating Robust 750 V GaN Transistors
PowiGaN technology permits manufacture of 94% efficient power supplies suitable for regions with frequent brown-outs and line surges Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced an expansion of its InnoSwitch™3 families of offline CV/CC
Nexperia partners with Ricardo to develop GaN-based EV inverter design
넥스페리아, 통신 및 산업용 분야에 적합한 고효율 GaN FET 출시
[Design Focus] World’s highest-performance wideband power amplifier (PA)
Designed for electronic warfare, radar and test instrumentation applications, Qorvo's TGA2962 breaks through multiple performance barriers with an industry-leading 10 Watts of RF power over the 2-20 GHz frequency range, 13dB large-signal gain and 20-35 percent power added efficiency. This combination delivers