Testing GaN devices to failure demonstrates robustness unmatched by silicon power MOSFETs, EPC says Efficient Power Conversion (EPC) announced its Phase Eleven Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. This strategy relied upon tests forcing devices to
Tag: GaN
EPC’s ePower stage IC features higher performance and smaller solution size for high power density applications
[White paper] Practical considerations when comparing SiC and GaN in power applications
Practical considerations when comparing SiC and GaN in power applications By Anup Bhalla, PhD. VP Engineering UnitedSiC Abstract Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductor technologies are promising great things for the future. SiC devices in a cascode configuration enable existing systems
VisIC unveils 100kW motor inverter reference design for EV, PV, industrial and other applications
KONKA enters production of GaN and AsP LEDs by use of AIXTRON MOCVD systems
파워 인테그레이션스, 강력한 750V GaN 트랜지스터 통합해 InnoSwitch3 IC 범위 확대
STMicroelectronics acquires majority stake in GaN innovator Exagan
STMicroelectronics has signed an agreement to ac stake in French Gallium Nitride (GaN) innovator Exagan. Exagan’s expertise in epitaxy, product development and application know-how will broaden and accelerate ST’s power GaN roadmap and business for automotive, industrial and consumer applications. Exagan will
Power Integrations Expands Range of InnoSwitch3 ICs Incorporating Robust 750 V GaN Transistors
PowiGaN technology permits manufacture of 94% efficient power supplies suitable for regions with frequent brown-outs and line surges Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced an expansion of its InnoSwitch™3 families of offline CV/CC