Transphorm, a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors, announced its second 900 V GaN FET is now in production. The TP90H050WS offers a typical on-resistance of 50 milliohms with a one kilovolt transient
Tag: GaN
바이퍼럭스, 클레버타키온 GaN 신소재의 접지형 75W PD 고속 멀티 충전기 국내 최초 출시
트랜스폼, 최신 평가보드인 TDTTP4000W065AN 출시
Transphorm’s second 900 V GaN FET is now in production
SemiQ takes Silvaco TCAD for design of power devices
StratEdge releases ‘Eutectic Die Attach Optimizes High Power GaN Devices’ white paper
StratEdge, a specialist in the design, production, and assembly of high-frequency and high-power semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, announced that the white paper, “Eutectic Die Attach Optimizes High Power GaN Devices,” is now available on the StratEdge website
Nexperia launches ‘Power Live’ July 2nd & 3rd 2020
Power Integrations’ GaN technology increases output power of high-efficiency display PSUs to 75W
Power Integrations, the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced that its InnoSwitch™3-MX isolated switcher IC family has been expanded with the addition of three new PowiGaN™ devices. As part of a chipset with Power Integrations’ InnoMux™ controller
