Efficient Power Conversion (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. This device
Tag: GaN
Dell begins to take fast gallium nitride(GaN) semiconductor to replace old, slow silicon chips
Transphorm’s SuperGaN Gen V FET delivers world’s lowest package on-resistance, targetting electic vehicle applications
Transphorm and Strategic Partner Marelli Positioned to Penetrate Rapidly Growing EV Power Conversion Market Transphorm, a pioneer and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today the sampling of its first Gen V device under its proprietary
트랜스폼, 5세대 디바이스 특허 GaN 전력 변환 디바이스 SuperGaN 출시
자일링스, TI와 협력하여 에너지 효율적인 5G 무선 솔루션 개발
Navitas’ GaNFast chargers enable Apple iPhone 12 high-speed charging compatibility
트랜스폼, 최신 고전압 GaN 신뢰성 데이터 공개
Navitas and Chargeasap deliver world’s most powerful GaN multi-input fast charger
Power Integrations targets compact smart-lighting designs with highly efficient GaN-powered LYTSwitch-6 LED drivers
Power Integrations, the leader in high-efficiency, high-reliability LED-driver ICs, today announced a new member of the LYTSwitch™-6 family of safety-isolated LED drivers for smart lighting applications – the LYT6078C. This new LYTSwitch-6 IC uses Power Integrations’ PowiGaN™ gallium nitride (GaN) technology to