GaN » 파워일렉트로닉스(PEMK) 매거진

Transphorm’s SuperGaN FETs power Boco Electronics’ highly efficient crypto mining power supply

English News

by Hordon Kim - 2022-03-28

Transphorm announced that Boco Electronics' 3.6 kW power supply uses its SuperGaN® FETs. The robust 12-volt AC-to-DC power supply achieves a peak efficiency of greater than 96% and is designed to be used in rugged environments caused by ultra-demanding applications such as crypto mining rigs and

EPC's “All-GaN” design for universal input USB PD3.1 ultra-fast charger reference design delivers 240W

English News

by Hordon Kim - 2022-03-28

EPC announces the availability of the EPC9171, a 90 V – 265 V universal AC input to 15 V – 48 V DC output power supply designed for USB PD3.1 ultra-fast chargers. This reference design can deliver 240 W maximum output power at 48

로옴, 8V 게이트 내압 150V GaN HEMT 양산 체제 구축

New Products

by PEMK 매거진 - 2022-03-23

로옴 (ROHM)는 기지국 · 데이터 센터를 비롯한 산업기기 및 각종 사물인터넷(IoT) 통신기기의 전원 회로용으로, 업계 최고 8V까지 게이트 내압 (게이트 – 소스 정격전압)을 높인 150V 내압GaN HEMT 「GNE10xxTB 시리즈 (GNE1040TB)」 양산 체제를 구축했다고 밝혔다. 일반적으로 GaN 디바이스는 저 ON 저항과 고속 스위칭 성능이

[APEC 2022] Cambridge GaN Devices' patented 650V GaN solutions set new efficiency standards

English News

by Hordon Kim - 2022-03-22

Cambridge GaN Devices(CGD) has emerged from stealth mode to announce the launch of its first portfolio of products capable of reducing power losses by up to 50%. Marking the company’s debut appearance at APEC (Applied Power Electronics Conference), CGD has launched the

트랜스폼과 TDK-람다, AC-DC GaN 전력 모듈 제품군 확대해

News

by Hordon Kim - 2022-03-182024-04-16

고신뢰도의 고성능 질화갈륨(GaN) 전력 변환 제품을 공급업체인 트랜스폼의 TGAN GaN 기반 PFH500F 제품이 전력 제품 공급업체인 TDK-람다(TDK-Lambda)에 채용되었다. PFH500F-12 및 PFH500F-48은 TDK의 500와트 AC-DC 전원 공급 장치 시리즈의 두 번째 및 세 번째 모듈로 각각 12볼트 및 48볼트 출력을 지원한다. 이 최신 전력

Navitas GaN ICs drive Samsung Galaxy S22 fast charging

English News

by Hordon Kim - 2022-03-18

Navitas Semiconductor has announced that its GaNFast technology has been selected for Samsung's flagship Galaxy S22 Ultra and S22+ smartphones. The small, powerful 45W Super Fast charger has the highest power density of any Samsung charger, enabled by GaNFast power ICs. The S22 Ultra, with 6.8"

Navitas' GaNFast IC fully charges Xiaomi gaming phone in 17 minutes

English News

by Hordon Kim - 2022-03-14

Navitas Semiconductor announced that its next-generation GaNFast power ICs with GaNSense™ technology drive a special-edition Redmi smartphone just launched in China. The K50 Champion Edition gaming phone is a joint-release by Redmi and the legendary Mercedes-AMG Petronas F1 team, celebrating their 2021-season Formula 1 constructors' championship victory. Matching the race-winning speed of the legendary 8-times- champion

Teledyne e2v HiRel unveils 650 V, 60 A GaN HEMTs for for hi-rel applications

English News

by Hordon Kim - 2022-03-07

Teledyne e2v HiRel announced the addition of new space screened versions of its popular 650 V, 60 A high reliability gallium nitride high electron mobility transistors (GaN HEMTs). The new parts go through NASA Level 1 screening flow and can be brought up to

Navitas highlights next-gen GaN ICs at Baird Non-Deal Roadshow

English News

by Hordon Kim - 2022-03-07

Navitas Semiconductor has announced a virtual non-deal roadshow hosted by Baird on March 3rd, 2022. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon chips. Navitas' proprietary GaN power ICs integrate GaN power (FET) and GaN drive plus control and

[MWC 2022] Navitas powers world's fastest smartphone charging technology from realme

English News

by Hordon Kim - 2022-03-05

Navitas Semiconductor has announced that its GaNFast technology has been selected to deliver an industry-leading fast charging solution for the realme GT Neo 3 smartphone series that saw its global launch this week at MWC 2022 in Barcelona. The new 150W charger supplied 'in-box' with the