Navitas Semiconductor has announced a virtual non-deal roadshow hosted by Baird on March 3rd, 2022. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon chips. Navitas' proprietary GaN power ICs integrate GaN power (FET) and GaN drive plus control and
Tag: GaN
[MWC 2022] Navitas powers world's fastest smartphone charging technology from realme
온세미, 팹-리터 전략 강화 위해 웨이퍼 제조 시설 매각
EPC collaborates with MPS to develop 2kW, 48V/14V, regulated output voltage, DC-DC reference design board for more efficient, smaller, faster, bidirectional converters
Transphorm demonstrates 99% efficiency power switching with 1200 V GaN power transistor at ISPSD 2022
Transphorm will demonstrate leading-edge R&D results from its 1200-volt GaN device at the International Symposium on Power Semiconductor Devices and ICs (ISPSD), a prestigious IEEE conference in the power semiconductor industry. The 1200V GaN device delivers greater than 99 percent efficiency and performs well against a
Topic preview of the PCIM Europe 2022: Highlights of the exhibition and conference
From 10 - 12 May 2022, the international power electronics industry will meet again live in Nuremberg after nearly two years of predominantly digital exchange. As in previous years, visitors of the leading exhibition and conference for power electronics can expect product innovations and a top-class
Cambridge GaN Devices launches project to develop highly reliable GaN power transistors and ICs to cut data centre emissions
ACM 리서치, 새로운 화합물 반도체 장비 출시로 습식 공정 제품 라인 강화
Innoscience propels 8-inch GaN-on-Si FET business in USA and Europe
Innoscience Technology, the company founded to create a global energy ecosystem based on high performance, low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions, announced the official launch of its international operations in the USA and Europe. Headquartered in Suzhou, China, Innoscience is now poised to support
EPC releases Phase 14 Report on GaN Reliability and use of physics-based models to project eGaN device lifetime
EPC announced its Phase-14 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. The rapid adoption of GaN devices in diverse applications calls for the continued accumulation of reliability statistics and research into the fundamental physics of failure in GaN