5G, 위성 통신 및 방위 애플리케이션의 성능 요건을 충족하는 새로운 MMIC 및 디스크리트 디바이스 마이크로칩테크놀로지(아시아 총괄 및 한국대표: 한병돈)는 최대 20GHz(기가헤르츠) 주파수를 지원하는 새로운 MMIC(단일마이크로파집적회로) 및 디스크리트 트랜지스터를 출시해 GaN(질화갈륨) RF(무선 주파수) 파워 디바이스 포트폴리오를 확장했다. 이들 디바이스는 PAE(전력부가효율) 및 고선형성을 결합해 5G에서
Tag: GaN
Transphorm’s SuperGaN Gen IV multi-kilowatt class power FET earns automotive qualification
Transphorm announced that its flagship SuperGaN® Gen IV 35 milliohm device has successfully completed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors. This achievement marks the Company’s third automotive-qualified product line. As with its Gen III predecessor, the Gen IV TP65H035G4WSQA
인피니언, USB Type-C 충전기를 위한 고집적 USB-C 컨트롤러 제공
Sino-American Silicon Products (SAS) invests $15 million to Transphorm
Transphorm, a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products, and Sino-American Silicon Products(SAS), a total green energy solution provider and the parent company to GlobalWafers, one of the top three largest silicon wafer manufacturers in the
Transphorm wins $1.4 million contract from Defense Advanced Research Projects Agency
Transphorm, a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products, has been awarded a $0.9 million contract with a $0.5 million option by the Defense Advanced Research Projects Agency (DARPA). This contract, W31P4Q-21-C-0009, commissions