Transphorm announced that its flagship SuperGaN® Gen IV 35 milliohm device has successfully completed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors. This achievement marks the Company’s third automotive-qualified product line. As with its Gen III predecessor, the Gen IV TP65H035G4WSQA
Tag: GaN
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Sino-American Silicon Products (SAS) invests $15 million to Transphorm
Transphorm, a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products, and Sino-American Silicon Products(SAS), a total green energy solution provider and the parent company to GlobalWafers, one of the top three largest silicon wafer manufacturers in the
Transphorm wins $1.4 million contract from Defense Advanced Research Projects Agency
Transphorm, a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products, has been awarded a $0.9 million contract with a $0.5 million option by the Defense Advanced Research Projects Agency (DARPA). This contract, W31P4Q-21-C-0009, commissions
