Practical considerations when comparing SiC and GaN in power applications By Anup Bhalla, PhD. VP Engineering UnitedSiC Abstract Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductor technologies are promising great things for the future. SiC devices in a cascode configuration enable existing systems
Tag: SiC
Digi-Key announces global distribution partnership with UnitedSiC
Digi-Key Electronics, a global electronic components distributor, has expanded its product portfolio by signing a global distribution partnership with UnitedSiC. The new partnership will provide Digi-Key customers with worldwide, 24-hour availability of UnitedSiC's silicon carbide product portfolio. "This partnership focuses on expanding the
파워 인테그레이션스의 SiC MOSFET용 SCALE-iDriver, AEC-Q100 자동차 인증 획득
[Hot] GTAT’s CrystX™ silicon carbide for rapidly expanding markets
As a semiconductor substrate, silicon carbide (SiC) is a high-demand, very efficient crystal material that can handle high voltages and high thermal loads. With decades of experience producing high-quality crystal materials, GT Advanced Technologies has introduced its CrystX™ silicon carbide for rapidly
온세미컨덕터, GTAT와 SiC 소재 생산·공급 계약 체결
Richardson RFPD announces availability of 6th-generation 650 V SiC Schottky diodes from Wolfspeed
JEDEC Wide Bandgap Power Semiconductor Committee publishes guideline for switching reliability evaluation procedures for GaN devices
JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, announces the publication of JEP180: Guideline for Switching Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices. Developed by JEDEC’s JC-70 Committee for Wide Bandgap Power Electronic
