II-VI Incorporated Introduces Heated Ion Implantation Foundry Services for 150 mm Silicon Carbide Wafers II‐VI , a specialist provider of foundry ion implantation services and support to the microelectronics industry, introduced heated ion implantation foundry services for 150 mm silicon carbide (SiC)
Tag: SiC
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Infineon expands supply base for silicon carbide with GT Advanced Technologies
실리콘랩스, Si828x 버전2로 절연형 게이트 드라이버 제품군 확장
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와이드 밴드갭 반도체와 디지털 제어를 사용하여 더 효과적인 역률 보정 설계(2)
II-VI expands silicon carbide manufacturing footprint for power electronics in electric vehicles and clean energy applications
II‐VI has expanded its silicon carbide (SiC) wafer finishing manufacturing footprint in China to serve the largest worldwide market for electric vehicles (EVs) and for clean energy applications. Spurred by increasing regulatory requirements for lower emissions of greenhouse gases and the decreasing cost
II-VI expands silicon carbide manufacturing footprint for power electronics in EV and clean energy applications
II‐VI, a specialist in wide-bandgap compound semiconductors, has expanded its silicon carbide (SiC) wafer finishing manufacturing footprint in China to serve the largest worldwide market for electric vehicles (EVs) and for clean energy applications. Spurred by increasing regulatory requirements for lower emissions of
Axcelis continues to ship Purion M SiC implanter to European power chip manufacturers
Axcelis Technologies announced multiple follow-on shipments of the company's Purion M™ SiC medium current implanter to several leading power device chip makers located in Europe. The Purion M features Axcelis' innovative solution for high temperature silicon carbide processing. The systems, which shipped
