Vishay – 페이지 2 – 파워일렉트로닉스(PEMK) 매거진

Vishay ‘s 200 V N-Channel MOSFET features industry-low RDS(ON) to increase power density and save energy

English News

by Hordon Kim - 2020-09-29

Vishay Intertechnology introduced a new 200 V n-channel MOSFET that offers industry-low typical on-resistance of 61 mΩ at 10 V in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK® 1212-8S package, in addition to improved on-resistance times gate charge — a

Vishay’s -30V P-channel MOSFET offers industry-low 1.7 milliohm on-resistance for high efficiency and power density

English News

by Hordon Kim - 2020-09-10

Vishay Intertechnology introduced the first-ever -30 V p-channel power MOSFET to offer on-resistance of 1.7 mΩ at 10 V. With its industry-low on-resistance and 6.15 mm by 5.15 mm thermally enhanced PowerPAK® SO-8 single package, the Vishay Siliconix TrenchFET® Gen IV SiRA99DP

Vishay snap-in power aluminum capacitors enable higher power density and increased longevity

English News

by Hordon Kim - 2020-08-12

Vishay Intertechnology introduced a new series of miniature snap-in power aluminum electrolytic capacitors that enable higher power density designs. The Vishay BCcomponents 193 PUR-SI series offers up to 30 % higher ripple current than standard solutions in similar case sizes while providing

Vishay’s MOS Barier Schottky rectifiers increase power density and efficiency

English News

by PEMK 매거진 - 2020-02-08

Vishay Intertechnology expanded its offering of surface-mount TMBS® Trench MOS Barrier Schottky rectifiers with 16 new 2 A and 3 A devices in the eSMP® series low profile SMP (DO-220AA) package. The Vishay General Semiconductor rectifiers feature a wide range of reverse