STMicroelectronics’ new family of GaN power semiconductors in the STPOWER portfolio can significantly reduce energy use and enable slimmer designs in a huge variety of electronic products.
The first device in ST’s new G-HEMT transistor family is the 650V SGT120R65AL with 120mΩ maximum on-resistance (RDS(on)), 15A maximum current capability, and a Kelvin source connection for optimum gate driving. It is available now in an industry-standard PowerFLAT 5×6 HV compact surface-mount package, at $3.00 (1000 pieces). Its typical applications are PC adaptors, USB wall chargers, and wireless charging.
The 650V GaN transistors in development are available now as engineering samples. These include the SGT120R65A2S with 120mΩ RDS(on) in an advanced laminated package, the 2SPAK™, which eliminates wire bonding to boost efficiency and reliability in high-power and high-frequency applications, as well as the SGT65R65AL and SGT65R65A2S both with 65mΩ RDS(on) in PowerFLAT 5×6 HV and 2SPAK, respectively. Volume production for these products is expected in H2 2022.
G-HEMT™ transistor family is an ultra-fast, zero Qrr e-mode HEMT, easily parallelable, well suited for very high frequency and power applications. G-FET and G-HEMT are both belonging to the PowerGaN family of STPOWER product portfolio.
Target applications include consumer equipment such as chargers, external power adapters for PCs, LED-lighting drivers, and power supplies inside televisions and home appliances. This equipment is produced in high volumes worldwide and, with greater efficiency, can realize significant CO2 savings. In higher-power applications, ST’s PowerGaN devices also benefit telecom power supplies, industrial motor drives, solar inverters, and electric vehicles and chargers.
A new cascode GaN transistor, SGT250R65ALCS with 250mΩ RDS(on) in a PQFN 5×6, belonging to the G-FET family, will be available for sampling in Q3 2022.
For more information please go to www.st.com/gan-transistors and www.st.com/gan-hemt-transistors.
