Navitas Semiconductor announced that over 13,000,000 of its gallium nitride (GaN) power ICs have been shipped to date with zero failures, demonstrating GaN’s rapid adoption in the fast-charging mobile consumer market & beyond.
New, fast gallium nitride (GaN) is a next-generation power semiconductor technology that runs up to 100x faster than old, slow silicon (Si) chips, with 40% energy savings and up to 3x power density improvements. Navitas’ GaNFast power ICs, which integrate power, analog and digital circuits, are the world’s highest performance, most integrated and lowest system-cost power GaN devices on the market. GaNFast ICs are shipping in mass production to many tier-1 customers including Lenovo, Dell, Xiaomi, and OPPO, among others.
Two Navitas customers were announced as CES2021 Innovation Awards Honorees. Chargeasap received their award for the high-power 200W Omega 2C+2A charger, and ADG were rewarded for their 100W ‘9-in-1’ power and communications hub. Both designs use GaNFast power ICs to deliver high performance in extremely compact form-factors.
“The predicted rise of GaN is being fulfilled,” said Gene Sheridan, Navitas’ CEO and co-founder. “At CES 2021, we were pleased to deliver on our predictions and not only announce that over 100 fast mobile chargers use GaNFast technology but also to thank our trusted foundry partner TSMC that helps us manufacture the products with its leading GaN process technology. We are experiencing unprecedented demand and truly appreciate TSMC’s support in bringing GaNFast power ICs to the market quickly. Navitas works to ‘electrify the planet’ and accelerate applications like EV/eMobility, solar inverters, efficient data centers and LED lighting… all of which serve to reduce our planet’s dependency on harmful, fossil-fuel energy sources.”
“We’re pleased with the result of our collaboration with Navitas in delivery of the high-efficiency GaN power ICs,” said Sajiv Dalal, Senior Vice President Business Management, TSMC North America. “TSMC will continue to support our customers with leading GaN manufacturing expertise to deliver great energy efficiency improvement for power conversion applications that are more eco-friendly.”
“TSMC is an industry-leading company and we are delighted with our continued partnership in accelerating the development and delivery of GaN power ICs,” said Dan Kinzer, Navitas COO/CTO and co-founder. “The delivery and quality results speak for themselves with a run-rate of over 1M GaNFast power ICs shipping every month, over 13M shipped in total and zero field failures. Navitas is investing aggressively to accelerate development of a new generation of GaN power ICs with even higher levels of integration, speed, energy savings and lower system costs.”
Navitas’ proprietary GaN process design kit (PDK) was developed based on TSMC’s GaN-on-Si platform. Through collaboration with TSMC, Navitas delivers first-mover advantage and sustained market dominance founded on major intellectual property strengths and speed of innovation. Navitas has 120+ patents issued or pending on all aspects of GaN device, packaging, applications and systems.
Hordon Kim
International Editor, hordon@powerelectronics.co.kr
