EPC’s GaN Power Bench™ gives you instant access to cross reference and replace many competitors’ silicon-based power management devices with eGaN® FETs.
Easily compare parametric differences without opening a single datasheet to identify the eGaN FET to increase your design efficiency. Enter a competitor’s part number to find a suggested replacement. This tool is intended to provide cross reference for N-channel MOSFETs from 15 V – 350 V.
EPC’s GaN Power Bench™ gives you instant access to cross reference and replace many competitors’ silicon-based power management devices with eGaN® FETs. Easily compare parametric differences without opening a single datasheet to identify the eGaN FET to increase your design efficiency.
Enter a competitor’s part number to find a suggested replacement. This tool is intended to provide cross reference for N-channel MOSFETs from 15 V – 350 V.
Click Cross Reference Search (epc-co.com)for details.
