Transphorm announced that its flagship SuperGaN® Gen IV 35 milliohm device has successfully completed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors. This achievement marks the Company’s third automotive-qualified product line. As with its Gen III predecessor, the Gen IV TP65H035G4WSQA
Author: Hordon Kim
Hordon Kim is an international editor at Power Electronics Magazine. He covers global news and events in English and runs a consulting agency in Korea.
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