VeriSilicon released the ZSP5000 Digital Signal Processing (DSP) series IPs, which are based on its fifth-generation silicon-proven DSP architecture. This product line adopts a highly scalable and energy-efficient design, and has been deeply optimized for compute-intensive workloads such as computer vision and
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Navitas'GaN and SiC technologies are highly recognized by VREMT Navitas Semiconductor has been awarded the ‘Outstanding Technical Collaboration Award’ from VREMT Energy, a subsidiary of Geely, which specializes in new energy vehicle power batteries, electric drive systems, charging systems and energy storage systems. VREMT and
Advanced Energy’s new power controller increases stability of semiconductor and industrial processes
Advanced Energy Industries, a specialist in highly engineered, precision power conversion, measurement and control solutions, announced a new silicon-controlled rectifier (SCR) power controller for precision control of lamp-based heating applications. Delivering unprecedented speed and accuracy, the new Thyro-XD™ supports next-generation semiconductor manufacturing
EPC Space unveils 300V rad-hard GaN FET for higher voltage satellite power systems
EPC Space launched the EPC7030MSH, a radiation-hardened (RH) 300 V gallium nitride (GaN) FET that delivers unmatched performance for high-voltage, high-power space applications, including next-generation satellite power plants and electric propulsion systems. As satellite platforms require higher voltage buses to support growing power demands
Toshiba ships second product in its smart motor control driver series
Reducing time for EV DC-charging: is boost current the solution?
Infrastructure for Ultrafast CCS (Combined Charging System) particularly in highway services and major forecourts within cities is pivotal for continued adoption of battery electric vehicles. To assist with the generational change in how we all drive, various innovative solutions are being introduced with
Imec achieves record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
imec, a Belgian R&D center, has set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility transistor) on silicon (Si) that achieves both record efficiency and output power for an enhancement-mode (E-mode)
Mitsubishi Electric achieves world’s first performance verification of GaN PA module for 5G-advanced base stations
Avnet India and NITK Surathkal collaborate on AI-powered sustainability solutions for landslide detection and wildlife preservation
Avnet India announced its partnership with the National Institute of Technology Karnataka (NITK), Surathkal, one of India's premier academic institutions. This collaboration, an integral part of Avnet India's robust ESG (Environmental, Social, and Governance) initiatives, focuses on leveraging Avnet's recognized expertise in
EPC’s high-efficiency GaN Inverter brings GaN power to medium-voltage motor drives
Efficient Power Conversion Corporation (EPC) released the EPC9196, a high-performance 25 ARMS, 3-phase BLDC motor drive inverter reference design powered by the EPC2304 eGaN FET. The EPC9196 is specifically designed for medium-voltage (96 V – 150 V) battery-powered motor drive applications, including steering systems in automated