고성능 질화갈륨(GaN) 전력 변환 솔루션 전문업체인 트랜스폼이 최신 평가보드인 TDTTP4000W065AN를 출시했다. 최대 4kW의 단상 교류-직류(AC-DC) 전력 변환을 위해 설계된 이 솔루션은 일반적인 아날로그 제어와 함께 브리지리스 토템폴(brigeless tomem-pole) 역률 보정(PFC) 기술을 활용하고 있다. 이러한 조합으로 디지털 싱글 컨트롤러(DSC)를 사용할 때 펌웨어를 개발할 필요
Tag: GaN
Transphorm’s second 900 V GaN FET is now in production
SemiQ takes Silvaco TCAD for design of power devices
StratEdge releases ‘Eutectic Die Attach Optimizes High Power GaN Devices’ white paper
StratEdge, a specialist in the design, production, and assembly of high-frequency and high-power semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, announced that the white paper, “Eutectic Die Attach Optimizes High Power GaN Devices,” is now available on the StratEdge website
Nexperia launches ‘Power Live’ July 2nd & 3rd 2020
Power Integrations’ GaN technology increases output power of high-efficiency display PSUs to 75W
Power Integrations, the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced that its InnoSwitch™3-MX isolated switcher IC family has been expanded with the addition of three new PowiGaN™ devices. As part of a chipset with Power Integrations’ InnoMux™ controller
파워 인테그레이션스 GaN 기술로 고효율 디스플레이 PSU의 출력 전력 75W로 증가
트랜스폼, 4세대 GaN 플랫폼 SuperGaN 전력 FET 발표
Transphorm Introduces SuperGaN™ Power FETs with Launch of Gen IV GaN Platform
Newest High Voltage GaN Devices Bring Increased Performance and Easier Designability at Reduced Cost Transphorm Inc.— the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified high voltage gallium nitride (GaN) power semiconductors — announced availability
Testing GaN devices to failure demonstrates robustness unmatched by silicon power MOSFETs, EPC says
Testing GaN devices to failure demonstrates robustness unmatched by silicon power MOSFETs, EPC says Efficient Power Conversion (EPC) announced its Phase Eleven Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. This strategy relied upon tests forcing devices to