Highlighted by the industry’s lowest RDS(on) of 9 milliohms (mohms) at 650/750V, the Gen 4 UJ4C/SC series is rated at 9, 11, 18, 23, 33, 44 and 60 mohms. This wide selection provides engineers with more device options, enabling greater flexibility to achieve an optimum cost/efficiency balance while maintaining generous design margins and circuit robustness.

Leveraging a unique cascode SiC FET technology in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET, these devices deliver a best-in-class RDS x A figure of merit, resulting in the lowest conduction losses in a small die.

Anup Bhalla, chief engineer at UnitedSiC (now Qorvo), said, “The D2PAK-7L package reduces inductance from compact internal connection loops which ─ along with the included Kelvin source connection ─ results in low switching loss, enabling higher frequency operation and improved system power density. These devices also feature silver-sinter die attach, resulting in very low thermal resistance for maximum heat extraction on standard PCBs as well as IMS substrates with liquid cooling.”

Pricing (1000-up, FOB USA) for the new 750V Gen 4 SiC FETs in the D2PAK-7L package ranges from $3.50 for the UJ4C075060B7S to $18.92 for the UJ4SC075009B7S. All devices are available from authorized distributors.

To learn more about how the UnitedSiC (now Qorvo) UJ4C/SC Gen 4 SiC FET series is delivering industry-best performance Figures of Merit that lower conduction losses and increase efficiency at higher speed, all while improving overall cost effectiveness, please visit https://unitedsic.com/group/uj4c-sc/. To download a copy of Qorvo’s SiC FET User Guide, click here.



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