imec, a Belgian R&D center, has set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility transistor) on silicon (Si) that achieves both record efficiency and output power for an enhancement-mode (E-mode)
Author: Hordon Kim
Hordon Kim is an international editor at Power Electronics Magazine. He covers global news and events in English and runs a consulting agency in Korea.
