By Stockton Wu, Principal System Engineer, Renesas Electronics Power designers continue to face the familiar challenge of how to deliver more power in less space without sacrificing efficiency or creating a thermal problem. Achieving this is especially important in 48V architectures, where the
Author: Hordon Kim
Hordon Kim is an international editor at Power Electronics Magazine. He covers global news and events in English and runs a consulting agency in Korea.
Renesas unveils industry-first 650V GaN in dual-side cooled 8x8mm package
The strategic case for hybrid AC/DC power
세계 최소 0603M 사이즈 구현한 3단자 Low ESL 적층 세라믹 커패시터
마우저, 대체 에너지 리소스 센터 공개
AI·칩렛 아키텍처 지원 위한 완전 자동화 310×310mm 패널 레벨 패키징 시스템
콤팩트한 150V 및 200V 트렌치 쇼트키 정류기
CATL, 헝가리에서 배터리 셀 시범 생산 개시
산업용 고서지 전류 내량 3300V SiC MOSFET 모듈
NoMIS Power demonstrates 6.5KV SiC MOSFET, advancing high-voltage roadmap to 10KV and 20 KV SiC IGBTs
NoMIS Power demonstrated the 6.5KV SiC MOSFETs successfully last month. While the company’s MOSFET portfolio scales from 3.3KV (in production) through the demonstrated 6.5KV device, the highest voltage classes – 10KV and above – increasingly favor SiC insulated-gate bipolar transistor (IGBT) architectures