MASSPHOTON, a specialist in gallium nitride (GaN) semiconductor devices and digital disinfection technologies, has successfully partnered with Sino Inno Lab to complete the deployment of its advanced NitroSteriX™ digital air sterilization system at China Hong Kong City (CHKC). Operated by Sino Group and situated
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Fraunhofer ISIT takes Silvaco’s DTCO flow to advance next-generation GaN device technology
Silvaco Group, a specialist provider of TCAD, EDA software and SIP solutions that enable innovative semiconductor design and digital twin modeling through AI software and automation, announced a strategic R&D collaboration with Fraunhofer Institute for Silicon Technology (ISIT). The partnership aims to accelerate development
VeriSilicon expands DSP portfolio with silicon-proven ZSP5000 vision core series for edge intelligence
VeriSilicon released the ZSP5000 Digital Signal Processing (DSP) series IPs, which are based on its fifth-generation silicon-proven DSP architecture. This product line adopts a highly scalable and energy-efficient design, and has been deeply optimized for compute-intensive workloads such as computer vision and
Navitas'GaN and SiC technologies are highly recognized by VREMT Navitas Semiconductor has been awarded the ‘Outstanding Technical Collaboration Award’ from VREMT Energy, a subsidiary of Geely, which specializes in new energy vehicle power batteries, electric drive systems, charging systems and energy storage systems. VREMT and
Advanced Energy’s new power controller increases stability of semiconductor and industrial processes
Advanced Energy Industries, a specialist in highly engineered, precision power conversion, measurement and control solutions, announced a new silicon-controlled rectifier (SCR) power controller for precision control of lamp-based heating applications. Delivering unprecedented speed and accuracy, the new Thyro-XD™ supports next-generation semiconductor manufacturing
EPC Space unveils 300V rad-hard GaN FET for higher voltage satellite power systems
EPC Space launched the EPC7030MSH, a radiation-hardened (RH) 300 V gallium nitride (GaN) FET that delivers unmatched performance for high-voltage, high-power space applications, including next-generation satellite power plants and electric propulsion systems. As satellite platforms require higher voltage buses to support growing power demands
Toshiba ships second product in its smart motor control driver series
Reducing time for EV DC-charging: is boost current the solution?
Infrastructure for Ultrafast CCS (Combined Charging System) particularly in highway services and major forecourts within cities is pivotal for continued adoption of battery electric vehicles. To assist with the generational change in how we all drive, various innovative solutions are being introduced with
Imec achieves record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
imec, a Belgian R&D center, has set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility transistor) on silicon (Si) that achieves both record efficiency and output power for an enhancement-mode (E-mode)