GE Aerospace and Wolfspeed have entered into a Memorandum of Understanding (MOU) to collaborate on accelerating the adoption of high-voltage silicon carbide across the industrial, aerospace and defense markets. Under the MOU, the companies plan to develop standards for high-voltage silicon carbide power
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CGD’s 650 V ICeGaN device helps increase EV range
[PCIM Europe 2026] Mitsubishi Electric and Semikron Danfoss develop new standard package for power semiconductor modules
[The Battery Show Europe 2026] ENNOVI showcases battery cell contacting systems
[PCIM Europe 2026] EPC mass produces 25V, 410 µΩ eGaN power transistor for high-density DC-DC conversion
Efficient Power Conversion (EPC) announced that its new EPC2378 25 V eGaN power transistor has entered mass production, enabling high-density power system designers to achieve higher efficiency, faster switching and greater power density in demanding DC-DC conversion applications. The EPC2378 is optimized for synchronous
Diodes’ four-channel ReDriver delivers 32Gbps signal integrity for next-generation automotive smart cockpit platforms
Diodes unveiled the PI3EQX32904Q, an automotive-compliant, 32Gbps, four-channel linear ReDriver that optimizes signal integrity for high-speed protocols such as PCI Express® (PCIe®) 5.0 specification, SAS4, and CXL. Targeting smart cockpit architectures that integrate advanced driver-assistance systems (ADAS), infotainment systems, and instrument clusters into
JEDEC unveils SiC guidelines to improve reliability and evaluation in power electronics
JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, announced the publication of JEP203: Guideline for Short Circuit Evaluation in Power Conversion Transistors and JEP204: Catalog of Stress Procedures for Silicon Carbide Devices for Power Electronic
Advanced Energy’s 800V DC converters fearue best-in-class peak power efficiency and density for next-generation AI data center DC-DC converters
[PCIM Europe 2026] Navitas’s isolated through-hole package for SiC MOSFETs features direct-cooled thermal management
Navitas Semiconductor launched its new UHV‑TO‑247‑4‑ISO package, setting a new benchmark for high‑performance discrete power devices. Featuring over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation, the package is purpose‑built for 1200 V to 3300 V GeneSiC SiC MOSFETs, delivering module‑like
Navitas collaborates with NVIDIA MGX™ ecosystem to accelerate 800 VDC AI infrastructure
Navitas Semiconductor was honored to participate in NVIDIA's Partner Ceremony held on May 29th, 2026, at the Taipei Nangang Exhibition Center. The event brought together key ecosystem partners supporting the NVIDIA AI Factory MGX™ platform, highlighting industry collaboration to accelerate the development of next-generation