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Home >> English News (Page 5)

English News

Magnachip launches 6th-generation 600V SJ MOSFETs for AI servers and EV charging applications

  • English News
by Hordon Kim - 2026-07-112026-07-11

Magnachip Semiconductor released two new 6th-generation 600V Super Junction (SJ) MOSFETs designed to meet the growing performance and efficiency requirements of AI server power applications. The new products feature low RDS(ON) values of 36mΩ and 37mΩ, helping reduce conduction losses and improve overall power

Alpha and Omega’s AmpStack packaging features leap forward in MOSFET power density

  • English News
by Hordon Kim - 2026-07-102026-07-10

Alpha and Omega Semiconductor unveiled its AOPL66801 80V MOSFET in a half-bridge configuration available in a state-of-the-art DFN6x5 AmpStack™ MOSFET package. This breakthrough packaging technology enables high-density designs for various power conversion applications, ranging from next-gen Megawatt AI factories to everyday power tools. Designed to

Wolfspeed files patent infringement lawsuit against Navitas Semiconductor

  • English News
by Hordon Kim - 2026-07-082026-07-10

Wolfspeed has filed a patent infringement lawsuit in the United States District Court for the District of Delaware against Navitas Semiconductor ("Navitas"). The lawsuit asserts that a broad range of Navitas products infringes multiple Wolfspeed patents, including U.S. Patent Nos. 8,169,005, 10,998,418, 10,886,396,

pSemi expands UltraCMOS+™ portfolio with new high-isolation RF switches

  • English News
by 이철민 기자 - 2026-07-062026-07-03

pSemi® released two additions to its UltraCMOS+™ RF switch portfolio: the PE42544 SP4T RF switch and the PE42429 SPDT RF switch. Both devices deliver high isolation, low insertion loss, and industry-leading linearity for next-generation wireless infrastructure, test and measurement, and automated test equipment applications. PE42544 UltraCMOS+™ SP4T

Atomera breakthrough targets broader RF adoption of GaN-on-Silicon

  • English News
by 이철민 기자 - 2026-07-052026-07-03

Atomera, a semiconductor materials and technology licensing company, propels a new approach to GaN-on-Silicon that addresses a key performance barrier limiting its use in mainstream RF applications. Today, high-performance RF GaN devices are typically built on silicon carbide substrates, which provide excellent

RFMW partners with RFHIC to deliver high-power GaN RF and microwave solutions worldwide

  • English News
by 이철민 기자 - 2026-07-032026-07-05

RFMW, a premier distributor of RF, microwave, and power components, announced a global distribution agreement with RFHIC, a compound semiconductor company specializing in high-power GaN-based RF and microwave solutions for wireless infrastructure, radar, and RF energy applications. Under the agreement, RFMW will provide

Elmo’s smaller, higher power motion controller and servo drives feature GaN technology for better efficiency

  • English News
by 이철민 기자 - 2026-07-032026-07-03

Elmo, a specialist in servo drive technology, announced the availability of a new motion controller and new servo drives for a wide range of applications in industrial, harsh, and extreme environments across temperature, altitude, sea depth, humidity, vibration, and more. Elmo is

Torex Semiconductor achieves “zero” current consumption with multi-function load switch ICs

  • English News
by 이철민 기자 - 2026-07-032026-07-03

Torex Semiconductor has developed the XC8115/XC8116 Series, multifunction load switch ICs that achieve 0µA current consumption. Featuring ultra-low power consumption, saving space, operation up to 105°C, and functions required for power sequence control, these multifunction load switch ICs are easy to use

[electronica Shanghai 2026] Vicor showcases innovative 48V high performance power solutions for automotive, HPC and industrial

  • English News
by Hordon Kim - 2026-07-032026-07-03

Vicor will showcase cutting-edge 48V high-performance power solutions at electronica Shanghai 2026. During the exhibition, Vicor will present its best-in-class power modules and 48V solutions addressing the pressing needs in automotive, HPC and industrial. With the rapid development of AI, electric mobility and

Keysight and WIN Semiconductors collaborate to cut design risk for high-frequency GaN chips

  • English News
by 이철민 기자 - 2026-07-032026-07-03

Keysight Technologies and WIN Semiconductors jointly work for a joint MMIC design workflow that enables GaN MMIC design houses to achieve first pass tapeout success. The workflow connects on-chip multi-domain simulation, 3D layout with verifications, and off-chip MMIC evaluation board design into

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