Designed for electronic warfare, radar and test instrumentation applications, Qorvo's TGA2962 breaks through multiple performance barriers with an industry-leading 10 Watts of RF power over the 2-20 GHz frequency range, 13dB large-signal gain and 20-35 percent power added efficiency. This combination delivers
Tag: GaN
JEDEC Wide Bandgap Power Semiconductor Committee publishes guideline for switching reliability evaluation procedures for GaN devices
JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, announces the publication of JEP180: Guideline for Switching Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices. Developed by JEDEC’s JC-70 Committee for Wide Bandgap Power Electronic
Transphorm shows latest GaN technology and tools at APEC 2020
트랜스폼 GaN, AES의 대형 여객기용 최신 전원 공급장치에 적용
아티슨, GaN 전력 증폭기용 DC-DC 컨버터 모듈 출시
파워 인테그레이션스, PowiGaN 기술로 업계 최고의 전력 밀도 확보한 LYTSwitch-6 LED 드라이버 출시
파워 인테그레이션스, GaN 기반의 InnoSwitch3 AC-DC 컨버터 IC 제품군 출시
Power Integrations Releases Gallium Nitride-Based InnoSwitch3 AC-DC Converter ICs
Advanced GaN technology yields significant increase in power and efficiency Power Integrations, the leader in high-voltage integrated circuits for energy-efficient power conversion, has announced new members of its InnoSwitch™3 families of offline CV/CC flyback switcher ICs. The new ICs feature up to 95%
Navitas’ GaNFast power ICs are available 24/7 at Digi-Key
Navitas Semiconductor (www.navitassemi.com) and Digi-Key Electronics (www.digikey.com) announced a distribution agreement to provide worldwide, 24-hour availability and accelerate market penetration and revenue ramp of GaNFast™ power ICs. The world’s first GaNFast power ICs enable power systems to simultaneously achieve MHz-frequency and highest-efficiency operation.