Texas Instruments (TI) announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support applications up to 10 kW. The LMG341x family enables designers to create smaller, more efficient and higher-performing designs compared to silicon field-effect
Tag: GaN
TI, 최대 10kW 애플리케이션을 지원 600V GaN FET 포트폴리오 출시
Richardson RFPD announces availability and support for New 100 W and 300 W power amplifier evaluation boards for wireless power transfer from GaN Systems
Richardson RFPD (www.richardsonrfpd.com) announced the availability and full design support capabilities for two new evaluation boards from GaN Systems (www.gansystems.com). The new power amplifiers are designed for the growing wireless charging market and feature gallium nitride (GaN) technology that enables smaller, lighter, lower-cost,
