Soitec announced a new fabrication facility at its headquarters in Bernin, France, primarily to manufacture new silicon carbide wafers which respond to key challenges of the electric vehicle and industrial markets. The extension will also support Soitec’s 300-mm Silicon-on-Insulator (SOI) activities. The factory is to
Tag: SiC
Transphorm demonstrates 99% efficiency power switching with 1200 V GaN power transistor at ISPSD 2022
Transphorm will demonstrate leading-edge R&D results from its 1200-volt GaN device at the International Symposium on Power Semiconductor Devices and ICs (ISPSD), a prestigious IEEE conference in the power semiconductor industry. The 1200V GaN device delivers greater than 99 percent efficiency and performs well against a
Topic preview of the PCIM Europe 2022: Highlights of the exhibition and conference
From 10 - 12 May 2022, the international power electronics industry will meet again live in Nuremberg after nearly two years of predominantly digital exchange. As in previous years, visitors of the leading exhibition and conference for power electronics can expect product innovations and a top-class
ACM 리서치, 새로운 화합물 반도체 장비 출시로 습식 공정 제품 라인 강화
[Hot] Crocus Technology의 산업용 및 자동차 온도 센서용 절연 전류 센서
A*STAR and Soitec jointly develop next-generation SiC semiconductors
The Institute of Microelectronics (IME) at the Agency for Science, Technology and Research (A*STAR) and Soitec have announced a research collaboration to develop next-generation silicon carbide (SiC) semiconductor devices to power electric vehicles and advanced high-voltage electronic devices. Under the collaboration, the parties
마이크로칩, MMIC 및 디스크리트 트랜지스터 출시.. GaN RF 파워 포트폴리오 확장
마이크로칩, 메르센 파워 스택 레퍼런스 디자인을 위한 SiC MOSFET 및 디지털 게이트 드라이버 공급
Soitec and Mersen jointly develop new silicon carbide (SiC) substrates for electric vehicle market
Soitec, a specialist in the design and production of innovative semiconductor materials, and Mersen, a global expert in electrical specialties and advanced materials, have entered into a strategic technical partnership to develop a new family of polycrystalline silicon carbide (poly-SiC) substrates for the