[PCIM Europe 2026] Navitas’s isolated through-hole package for SiC MOSFETs features direct-cooled thermal management

Navitas Semiconductor launched its new UHV‑TO‑247‑4‑ISO package, setting a new benchmark for high‑performance discrete power devices. Featuring over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation, the package is purpose‑built for 1200 V to 3300 V GeneSiC SiC MOSFETs, delivering module‑like

EPC targets high-density motion systems with GaN ePower™ stage technology

 Efficient Power Conversion (EPC) unveiled the EPC91128, EPC91129, EPC91130, and EPC91131 evaluation boards - compact, high-performance 3-phase BLDC motor drive inverter platforms designed to accelerate development of next-generation motor control systems using GaN technology. The boards are built around EPC's integrated EPC23108–EPC23111 ePower™ Stage ICs. They can handle