The team of Prof. Sekiguchi of Toyohashi University of Technology and ALLOS Semiconductors have engaged to realize high efficiency nitride-based micro LED chips for novel in-vivo neutral application. Since their evolution in the 1990s, nitride LEDs have made inroads into our daily lives,
Tag: GaN
Cambridge GaN Devices spurs up development of energy-saving GaN transistors
Transphorm’s GaN products meet crypto mining power supply units performance requirements
자동차 LiDAR 애플리케이션에 AEC 기준치 이상의 견고성을 증명하는 질화 갈륨 신뢰성 테스트
[Hot] Molded ceramic package for GaN devices
Used in Mil-Std Application StratEdge's off-the-shelf line of molded ceramic packages can be configured to meet the requirements for chips with frequencies up to 18 GHz, including gallium nitride (GaN) devices. StratEdge molded ceramic packages come in over 200 standard outlines, dramatically increasing
[Tech Watch] The Quality and Reliability of VisIC’s D3GaN technology
Navitas ships 13,000,000 GaNFast power ICs with world-class reliability
EPC releases physics-based models projecting eGaN® device lifetime in new reliability report
JEDEC Wide Bandgap Power Semiconductor Committee publishes new test method for continuous-switching evaluation of GaN power conversion devices
JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, announced the publication of JEP182: Test Method for Continuous-Switching Evaluation of Gallium Nitride Power Conversion Devices. Developed by JEDEC’s JC-70 Committee for Wide Bandgap Power Electronic Conversion