Diodes expands its innovative load switch portfolio with the introduction of DML1012ALDSQ, an automotive-compliant* low drain-source on-resistance (RDS(ON)) N-channel MOSFET smart load switch. The device is ideal for reliable power sequencing and power rail control in automotive applications that include advanced driver-assistance
Author: 이철민 기자
파워일렉트로닉스 매거진의 뉴스 에디터 입니다. 전력전자 및 배터리, 모빌리티 관련 이야기를 풀어가고 있습니다.
지능형 전기차(EV) 충전 및 에너지 인프라
EV 견인 인버터용 VisIC D³GaN 기술
Navitas’ isolated through-hole package for SiC MOSFETs enable direct-cooled thermal management
Navitas Semiconductor launched its new UHV‑TO‑247‑4‑ISO package, setting a new benchmark for high‑performance discrete power devices. Featuring over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation, the package is purpose‑built for 1200 V to 3300 V GeneSiC SiC MOSFETs, delivering module‑like performance
전기차 주행거리를 향상시키는 CGD의 650V ICeGaN 소자
NoMIS, 고전압 HVDC 서브모듈용 3.3 kV SiC MOSFET을 공급해
CGD’s 650 V ICeGaN device helps increase EV range
재고관리를 위한 배터리 없는 블루투스 저에너지(BLE) 태그
Diodes’ four-channel ReDriver delivers 32Gbps signal integrity for next-generation automotive smart cockpit platforms
Diodes unveiled the PI3EQX32904Q, an automotive-compliant, 32Gbps, four-channel linear ReDriver that optimizes signal integrity for high-speed protocols such as PCI Express® (PCIe®) 5.0 specification, SAS4, and CXL. Targeting smart cockpit architectures that integrate advanced driver-assistance systems (ADAS), infotainment systems, and instrument clusters into