Diodes Incorporated has entered into a definitive agreement to acquire ElevATE Semiconductor, Inc. (ElevATE) in an all-cash transaction for $250 million. ElevATE is a fabless semiconductor company based in San Diego, California that specializes in the development of integrated circuits (IC) for the
Author: 이철민 기자
TI brings intelligence to battery management systems with industry’s highest-cell-count EIS-enabled battery monitor
Texas Instruments (TI) unveiled the industry's highest-cell-count battery monitor with an integrated electrochemical impedance spectroscopy (EIS) engine, bringing predictive intelligence, comprehensive data and real-time diagnostics to battery monitoring in electric vehicles (EV) and energy storage system (ESS) applications. The BQ79826Z-Q1 battery monitor enhances
Continental Battery Systems turns used batteries into new opportunities through recycling program
Continental Battery Systems is highlighting its long-standing battery recycling and recovery program, an initiative designed to support a more sustainable battery supply chain by collecting, testing, reconditioning and recycling used batteries. “Our goal is to keep batteries out of landfills,” said Juan Sierra,
[Hot] 소형 차단기용 전원 스위치
0V 꺼짐 시 높은 효율을 달성하는 SiC MOSFET 게이트 드라이버 설계
Dynex, 고급 450A, 650V GaN 전력 모듈 출시
울프스피드, 고전압 탄화규소(SiC) 도입 가속화
pSemi expands UltraCMOS+™ portfolio with new high-isolation RF switches
pSemi® released two additions to its UltraCMOS+™ RF switch portfolio: the PE42544 SP4T RF switch and the PE42429 SPDT RF switch. Both devices deliver high isolation, low insertion loss, and industry-leading linearity for next-generation wireless infrastructure, test and measurement, and automated test equipment applications. PE42544 UltraCMOS+™ SP4T
Atomera breakthrough targets broader RF adoption of GaN-on-Silicon
Atomera, a semiconductor materials and technology licensing company, propels a new approach to GaN-on-Silicon that addresses a key performance barrier limiting its use in mainstream RF applications. Today, high-performance RF GaN devices are typically built on silicon carbide substrates, which provide excellent