Design Guide

Electronic devices that are in proximity or share common conductors are susceptible to electromagnetic interference (EMI) that can disrupt their operation. Minimizing emissions is necessary to ensure that electrical systems do not interfere with each other’s normal operation when placed in the

Gallium Nitride (GaN)-based electronic devices switch faster and consume less energy than classic silicon-based devices. With GaN, >99% energy efficiency is achievable, enabling a new generation of compact and lighter power converters with reduced environmental impact. Historically, GaN transistors have always been difficult

지능형 센서 및 이미터 분야의 전문업체인 ams OSRAM이 LED 포일을 자동차 애플리케이션에 통합하는 혁신적인 접근 방식인 차세대 ALIYOS™ LED-on-foil 기술을 발표했다. 이 최첨단 방식은 ams OSRAM의 ALIYOS™ 기술과 협력 파트너사인 레온하르트 쿠르츠(LEONHARD KURZ)의 혁신적인 IMD (In-Mold Decoration) 사출 및 FFB (Functional Foil Bonding) 기술의