Navitas Semiconductor announced the world’s first production of 650 V bi-directional GaNFast ICs. This creates a paradigm shift in power by enabling the transition from two-stage to single-stage topologies. Bi-Directional GaNFast power ICs function as two ‘back-to-back’ GaN power switches. They are leading-edge,

The JANS qualification represents the highest level of screening and acceptance requirements, ensuring the superior performance, quality and reliability of discrete semiconductors for aerospace, defense and spaceflight applications. Microchip Technology announced its completion of its family of radiation-hardened (rad-hard) power MOSFETs to the MIL-PRF-19500/746 slash-sheet

Renesas Electronics unveileed the RA0E2 microcontroller (MCU) Group based on the Arm® Cortex®-M23 processor. The new, cost-competitive devices offer extremely low power consumption, extended temperature range, and a wide variety of peripheral functions and safety features. Renesas had introduced the RA0 MCU series in

Littelfuse released the IXD2012NTR, a high-speed, high-side and low-side gate driver designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration. The IXD2012NTR is optimized for high-frequency power applications, delivering superior switching performance and enhanced design flexibility. The IXD2012NTR operates over a wide