글_ 스리잔 아쇼크(Srijan Ashok), 텍사스인스트루먼트(Texas Instruments) 최신 전원 공급 장치 설계에는 고효율과 높은 전력 밀도가 필수이다. 그래서 설계자는 다양한 전력 변환 토폴로지에서 GaN(질화 갈륨) 장치를 사용하고 있다. GaN을 이용하면 고주파 스위칭이 가능하기 때문에 패시브 크기를 줄여주고, 나아가 밀도를 높여 준다. 또한 GaN은 실리콘이나 SiC(실리콘
Tag: GaN
뛰어난 효율과 전력 밀도를 제공하는 차세대 GaN 전력 디스크리트
피라미드형 GaN 마이크로 LED를 아시나요?
Navitas delivers more power for AI & EV with sxtended GaNSafe™ portfolio
Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced that its high-power GaNSafe family is now available in a TOLT (Transistor Outline Leaded Top-side cooling) package. The
[New] 최고 전력 밀도의 DCDC 컨버터
QROMIS is recognized with Global Enabling Technology Leadership Award for Addressing Cost and Reliability Challenges in the GaN Semiconductors Market
Frost & Sullivan recently researched the GaN semiconductors industry and, based on its findings, recognizes QROMIS with the 2024 Global Enabling Technology Leadership Award. QROMIS is a world-class advanced semiconductor technologies provider that offers high-performance materials solutions to help global businesses enhance their digital transformation,
